Título: IR optoelectronics and type -II heterojunctions on the base of III-V semiconductor alloys.
Ponente: Dr. Konstantin Moiseev.
Institución de Procedencia: Ioffe Physico – Technical Institute Russian Academuy of Sciences
Fecha: 3 de junio
Lugar: Salón de Usos Múltiples del ICCO
Hora: 12:00

Resumen
In this talk the main properties and peculiarities of type-II heterojunctions will be discussed. The GaSb/InAs couple and its different narrow gap solid solutions will be considered as materials to make such heterojunctions. LPE growth technology have been used for the preparation of different structures and devices based, mainly, on antimonides.